High-frequency module and communication device

ABSTRACT

A radio frequency module includes a substrate having first and second main surfaces; a first filter; third and fourth switches connected to the filter; an amplifier; and/or a matching circuit element connected to the first filter. In various embodiments, the matching circuit element may be on the first main surface while the amplifier may be on the second main surface; the matching circuit element may be on the first main surface while the third switch may be on the second main surface; and/or the filter may be on the first main surface while the fourth switch may be on the second main surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. patent application Ser. No. 17/152,108filed on Jan. 19, 2021, which is a continuation of U.S. patentapplication Ser. No. 16/567,243 filed on Sep. 11, 2019, which is acontinuation of International Application No. PCT/JP2018/007822 filed onMar. 1, 2018, which claims priority from Japanese Patent Application No.2017-050494 filed on Mar. 15, 2017. The contents of these applicationsare incorporated herein by reference in their entireties.

BACKGROUND OF THE DISCLOSURE Field of the Disclosure

The present disclosure relates to a high-frequency module and acommunication device.

Description of the Related Art

Conventionally, as a high-frequency module mounted on a mobilecommunication device or the like, for example, a module in which a chipcomponent such as a matching element is mounted on one main surface of asubstrate, and a semiconductor chip component including a switch unitconfigured with a plurality of switches and an amplifying unitconfigured with a plurality of amplifiers is mounted on the other mainsurface of the substrate is disclosed (for example, refer to PatentDocument 1).

Patent Document 1: Japanese Patent No. 5773082

BRIEF SUMMARY OF THE DISCLOSURE

However, in the above-mentioned Patent Document 1, depending onpositions where the switch unit and the amplifying unit are provided inthe semiconductor chip component, the isolation characteristics betweenthe switch unit and the amplifying unit may deteriorate. For example,when an output from the switch unit is inputted to the amplifying unitto be amplified, an output from the amplifying unit may return to theoutput from the switch unit and a signal may be oscillated because theisolation characteristics between the switch unit and the amplifyingunit deteriorate.

In order to achieve the above object, a radio frequency module accordingto an aspect of the present disclosure comprises: a substrate having afirst main surface, and a second main surface opposite the first mainsurface; a fourth switch on the substrate, the fourth switch having afirst terminal connected to a first antenna, a second terminal connectedto a second antenna, and a third terminal connected to the firstterminal or the second terminal; a third switch on the substrate, thethird switch having a fourth terminal connected to the third terminal,and a fifth terminal connected to the fourth terminal; a first filter onthe substrate, the first filter being connected to the fifth terminal; afirst matching circuit element on the substrate, the first matchingcircuit element being connected to the first filter; and a firstamplifier on the substrate, the first amplifier being connected to thematching circuit element, wherein: the first matching circuit element ison the first main surface, and the first amplifier is on the second mainsurface.

Additionally, the radio frequency module may further comprise asemiconductor chip component, wherein: the semiconductor chip componentmay comprise the first amplifier, and when the substrate is viewed froma direction perpendicular to the first main surface of the substrate,the semiconductor chip component may at least partially overlaps thefirst matching circuit element.

Further, when the substrate is viewed from the direction perpendicularto the first main surface of the substrate, the semiconductor chipcomponent may at least partially overlap the first filter.

Further, the semiconductor chip component may further comprise the thirdswitch.

Further, the semiconductor chip component may further comprise a groundelectrode, and the ground electrode may be physically arranged betweenthe third switch and the first amplifier in the semiconductor chipcomponent.

Further, the first amplifier may be a low-noise amplifier; and/or thefirst matching circuit element may be a chip inductor.

Further, the third switch may further have a sixth terminal connected tothe third terminal, the radio frequency module may further comprise: asecond amplifier on the substrate, a second filter on the substrate, thesecond filter being connected between the sixth terminal of the thirdswitch and the second amplifier, and a second matching circuit elementon the substrate, the second matching circuit element being connectedbetween the second filter and the second amplifier, wherein the secondfilter and the second matching circuit element may be on the first mainsurface, and wherein the semiconductor chip component may furthercomprise the second amplifier; when the substrate is viewed from thedirection perpendicular to the first main surface of the substrate, thesemiconductor chip component may at least partially overlaps the secondmatching circuit element; when the substrate is viewed from thedirection perpendicular to the first main surface of the substrate, thesemiconductor chip component may at least partially overlaps the secondfilter; the semiconductor chip component may further comprise the thirdswitch; the fourth switch may be on the second main surface of thesubstrate; the first amplifier and the second amplifier may be low-noiseamplifiers; and/or the first matching circuit element and the secondmatching circuit element may be chip inductors.

Further, the first filter may be on the first main surface, and thefourth switch and the third switch may be on the second main surface;the third switch may further have a sixth terminal connected to thethird terminal, wherein the radio frequency module may further comprise:a second amplifier on the substrate, a second filter on the substrate,the second filter being connected between the sixth terminal of thethird switch and the second amplifier, and a second matching circuitelement on the substrate, the second matching circuit element beingconnected between the second filter and the second amplifier, whereinthe second filter and the second matching circuit element may be on thefirst main surface, and wherein the second amplifier may be on thesecond main surface; the first amplifier and the second amplifier may below-noise amplifiers; and/or the first matching circuit element and thesecond matching circuit element may be chip inductors.

According to another aspect of the present disclosure, a radio frequencymodule comprises: a substrate having a first main surface, and a secondmain surface opposite the first main surface; a fourth switch on thesubstrate, the fourth switch having a first terminal connected to afirst antenna, a second terminal connected to a second antenna, and athird terminal connected to the first terminal or the second terminal; athird switch on the substrate, the third switch having a fourth terminalconnected to the third terminal, and a fifth terminal connected to thefourth terminal; a first filter on the substrate, the first filter beingconnected to the fifth terminal; a first matching circuit element on thesubstrate, the first matching circuit element connected to the firstfilter; and a first amplifier on the substrate, the first amplifierbeing connected to the matching circuit element, wherein: the firstmatching circuit element is on the first main surface, and the thirdswitch is on the second main surface.

Additionally, the radio frequency module may further comprise asemiconductor chip, wherein: the semiconductor chip may comprise thethird switch, and when the substrate is viewed from a directionperpendicular to the first main surface of the substrate, thesemiconductor chip component may at least partially overlaps the firstmatching circuit element.

Further, the semiconductor chip component may further comprise a groundelectrode, and the ground electrode may be physically arranged betweenthe third switch and the first amplifier in the semiconductor chipcomponent.

Further, when the substrate is viewed from the direction perpendicularto the first main surface of the substrate, the semiconductor chipcomponent may at least partially overlaps the first filter; the fourthswitch may be on the first main surface of the substrate; and/or thefirst amplifier and the second amplifier may be low-noise amplifiers,and the first matching circuit element and the second matching circuitelement may be chip inductors.

A radio frequency module according to another aspect of the presentdisclosure comprises: a substrate having a first main surface, and asecond main surface opposite the first main surface; a fourth switch onthe substrate, the fourth switch having a first terminal connected to afirst antenna, a second terminal connected to a second antenna, and athird terminal connected to the first terminal or the second terminal; athird switch on the substrate, the third switch having a fourth terminalconnected to the third terminal, and a fifth terminal connected to thefourth terminal; and a filter on the substrate, the filter beingconnected to the fifth terminal, wherein: the filter is on the firstmain surface, and the fourth switch and the third switch are on thesecond main surface.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a circuit configuration diagram illustrating an example of ahigh-frequency module according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating an example of thehigh-frequency module according to the first embodiment.

FIG. 3 is a cross-sectional view illustrating an example of ahigh-frequency module according to a second embodiment.

FIG. 4 is a cross-sectional view illustrating an example of ahigh-frequency module according to a third embodiment.

FIG. 5 is a cross-sectional view illustrating an example of ahigh-frequency module according to a fourth embodiment.

FIG. 6 is a cross-sectional view illustrating an example of ahigh-frequency module according to a fifth embodiment.

FIG. 7 is a cross-sectional view illustrating an example of ahigh-frequency module according to a sixth embodiment.

FIG. 8 is a cross-sectional view illustrating an example of ahigh-frequency module according to a seventh embodiment.

FIG. 9A is a top view illustrating an example of a semiconductor chipcomponent according to the seventh embodiment.

FIG. 9B is a cross-sectional view illustrating an example of thesemiconductor chip component according to the seventh embodiment.

FIG. 10 is a configuration diagram illustrating an example of acommunication device according to an eighth embodiment.

DETAILED DESCRIPTION OF THE DISCLOSURE

Hereinafter, embodiments of the present disclosure will be described indetail with reference to the examples and the drawings. The embodimentsdescribed below are all inclusive or specific examples. The numericalvalues, shapes, materials, constituent elements, arrangement andconnection configurations of the constituent elements shown in thefollowing embodiments are merely examples, and are not intended to limitthe present disclosure. Among the constituent elements in the followingembodiments, constituent elements that are not described in theindependent claims will be described as arbitrary constituent elements.Also, the dimensions of the constituent elements illustrated in thedrawings are not necessarily strict. In addition, in the drawings, thesame reference signs are used for the same configurations, and aduplicating description thereof will be omitted or simplified.

First Embodiment

[1. Circuit Configuration of High-Frequency Module]

FIG. 1 is a circuit configuration diagram illustrating an example of ahigh-frequency module 10 according to the first embodiment. In FIG. 1,antenna elements ANT1 and ANT2 are illustrated in addition to thehigh-frequency module 10. The antenna elements ANT1 and ANT2 aremultiband compatible antennas that are compliant with a communicationstandard, such as long term evolution (LTE), for transmitting orreceiving high-frequency signals.

The high-frequency module 10 is, for example, a module disposed in afront end unit included in a multi-mode/multiband compatible cellularphone. The high-frequency module 10 is built in a multiband compatiblecellular phone compliant with a communication standard such as LTE.

The high-frequency module 10 includes a filter unit 20 including aplurality of filters, a switch unit 30 connected to the filter unit 20,an amplifying unit 50 configured to amplify a high-frequency signalpassing through the filter unit 20, and a matching unit 40 connectedbetween the filter unit 20 and the amplifying unit 50 to performimpedance matching of the amplifying unit 50. Moreover, thehigh-frequency module 10 includes a fourth switch 70 and a second switch60. Although the details will be described later, the high-frequencymodule 10 includes a multilayer substrate 100, and the fourth switch 70,the switch unit 30, the filter unit 20, the second switch 60, thematching unit 40, and the amplifying unit 50 are provided on themultilayer substrate 100 (see FIG. 2, and the like).

The filter unit 20 includes a plurality of filters configured with asurface acoustic wave (SAW) resonator, a bulk acoustic wave (BAW)resonator, a film bulk acoustic resonator (FBAR), or the like. Thefilter unit 20 includes a plurality of first filters 21 a and 21 b, anda plurality of second filters 22 a to 22 c, as the plurality of filters.Each of the first filters 21 a and 21 b, and the second filters 22 a to22 c may be configured with an LC resonance circuit or the like. Whenthe first filters 21 a and 21 b, and the second filters 22 a to 22 c area SAW filter configured with a SAW resonator, each of them is providedwith a substrate and an interdigital transducer (IDT) electrode. Thesubstrate is a substrate having piezoelectricity on at least a surfacethereof. The substrate may include, for example, a piezoelectric thinfilm on the surface thereof, and may be configured with a multilayerbody formed with a film having a different acoustic velocity from thatof the piezoelectric thin film, a support substrate, and the like. Thesubstrate may be, for example, a multilayer body including a highacoustic velocity support substrate and a piezoelectric thin film formedon the high acoustic velocity support substrate, a multilayer bodyincluding a high acoustic velocity support substrate, a low acousticvelocity film formed on the high acoustic velocity support substrate,and a piezoelectric thin film formed on the low acoustic velocity film,or a multilayer body including a support substrate, a high acousticvelocity film formed on the support substrate, a low acoustic velocityfilm formed on the high acoustic velocity film, and a piezoelectric thinfilm formed on the low acoustic velocity film. Further, the substratemay have piezoelectricity over the entire substrate. Here, it is assumedthat the first filters 21 a and 21 b, and the second filters 22 a to 22c are configured with a surface acoustic wave resonator. Accordingly,since each of the first filters 21 a and 21 b, and the second filters 22a to 22 c can be configured with an IDT electrode formed on a substratehaving piezoelectricity at least on a surface thereof, it is possible toachieve the small-sized and low-height filter unit 20 havingtransmission characteristics with a high degree of steepness.

The first filters 21 a and 21 b are filters having a frequency bandincluded in a first frequency band group as a pass band, and the secondfilters 22 a to 22 c are filters having a frequency band included in asecond frequency band group different from the first frequency bandgroup as a pass band. The first frequency band group and the secondfrequency band group are, for example, low band (LB), middle band (MB),high band (HB), and the like. For example, in an explanation focusing onthe LB, the frequency band included in the LB is a frequency band suchas LTE Bands 8, 12, 13, 26, or the like. For example, in a case wherethe first frequency band group is the LB, the first filter 21 a is afilter whose pass band is any one of Bands 8, 12, 13, 26, or the like,and the first filter 21 b is a filter whose pass band is any other oneof Bands 8, 12, 13, 26, or the like.

The switch unit 30 is connected to the filter unit 20 and includes aswitch configured to switch filters through which a high-frequencysignal passes among a plurality of filters. The switch unit 30 includesa first switch 31 and a third switch 32 as the switches described above.The first switch 31 is connected between the filter unit 20 and thematching unit 40 (a first matching element 41 to be described later),and switchably connects one of a plurality of paths passing through thefilter unit 20 (paths passing through the first filters 21 a and 21 b)and one path connected to the matching unit 40. The third switch 32 isconnected to one input/output terminal different from the otherinput/output terminal of the filter unit 20 to which the matching unit40 is connected. The third switch 32 switchably connects one pathconnected to the antenna element ANT1, ANT2, or the like via the fourthswitch 70 and one of a plurality of paths passing through the filterunit 20 (paths passing through the first filters 21 a and 21 b, and thesecond filters 22 a to 22 c).

The second switch 60 is connected between the filter unit 20 and thematching unit 40 (a second matching element 42 to be described later),and switchably connects a plurality of paths passing through the filterunit 20 (paths passing through the second filters 22 a to 22 c) and onepath connected to the matching unit 40.

The fourth switch 70 is a switch configured to switch between atransmission path and a reception path, and is connected to input/outputterminals (for example, input/output terminals 120 illustrated in FIG. 6to be described later) of the high-frequency module 10. In thisembodiment, a path passing through the high-frequency module 10 is usedas the reception path. The input/output terminals are connected to, forexample, the antenna elements ANT1 and ANT2, the transmission (Tx) pathor the like. For example, the antenna element ANT1 is an antenna commonfor both transmission and reception, and the antenna element ANT2 is anantenna for reception. By the fourth switch 70, the reception path(high-frequency module 10) is connected to the antenna element ANT1 orthe antenna element ANT2, or the transmission path is connected to theantenna element ANT1.

The amplifying unit 50 includes a first amplifier 51 for amplifying thehigh-frequency signal passing through the first filters 21 a and 21 b,and a second amplifier 52 for amplifying the high-frequency signalpassing through the second filters 22 a to 22 c. That is, the firstamplifier 51 amplifies a high-frequency signal in the frequency bandincluded in the first frequency band group, and the second amplifier 52amplifies a high-frequency signal in the frequency band included in thesecond frequency band group. In the present embodiment, the firstamplifier 51 and the second amplifier 52 are low-noise amplifiersconfigured to amplify a high-frequency reception signal. Note that thefirst amplifier 51 and the second amplifier 52 are not limited tolow-noise amplifiers, and may be, for example, power amplifiersconfigured to amplify a high-frequency transmission signal.

The matching unit 40 includes a first matching element 41 connectedbetween the first switch 31 and the first amplifier 51, and a secondmatching element 42 connected between the second switch 60 and thesecond amplifier 52. The first matching element 41 performs impedancematching between the first switch 31 and the first amplifier 51, and thesecond matching element 42 performs impedance matching between thesecond switch 60 and the second amplifier 52. The first matching element41 and the second matching element 42 may be, for example, an electroniccomponent such as an inductor, or a capacitor, or may be formed bywiring or the like.

Connection of the first switch 31, the second switch 60, the thirdswitch 32, and the fourth switch 70 is switched by a control unit (notillustrated) or an RF signal processing circuit (RFIC) included in thehigh-frequency module 10. The first switch 31, the second switch 60, thethird switch 32 and the fourth switch 70 are, for example, a fieldeffect transistor (FET) switch made of GaAs or a complementary metaloxide semiconductor (CMOS), or a diode switch.

Note that, in this embodiment, the high-frequency module 10 may notinclude the second switch 60 and the fourth switch 70. When thehigh-frequency module 10 does not include the second switch 60, thefilter unit 20 may not include the second filters 22 a to 22 c, thematching unit 40 may not include the second matching element 42, and theamplifying unit 50 may not include the second amplifier 52.

[2. Structure of High-frequency Module]

Next, a structure of the high-frequency module 10 will be described withreference to FIG. 2.

FIG. 2 is a cross-sectional view illustrating an example of thehigh-frequency module 10 according to the first embodiment. In FIG. 2,the illustration of the second switch 60 and the fourth switch 70 isomitted.

The high-frequency module 10 is provided with the multilayer substrate100, and the switch unit 30, the filter unit 20, the matching unit 40,and the amplifying unit 50 are provided on the multilayer substrate 100.The multilayer substrate 100 may be, for example, a printed circuitboard or a low temperature co-fired ceramics (LTCC) substrate. Themultilayer substrate 100 has one main surface 101 and the other mainsurface 102, and is configured with inner layers 103 to 105 from a sideof the one main surface 101 toward a side of the other main surface 102.That is, a layer on the side of the one main surface 101 of a pluralityof layers configuring the multilayer substrate 100 is, for example, theinner layer 103, and a layer on the side of the other main surface 102is, for example, the inner layer 105. Note that the number of layersconfiguring the multilayer substrate 100 is not limited to three layersof the inner layers 103 to 105, but may be two layers, or four or morelayers.

The matching unit 40 is provided on the one main surface 101 of themultilayer substrate 100. The matching unit 40 may be mounted on the onemain surface 101 of the multilayer substrate 100 as an electroniccomponent, or may be formed on the one main surface 101 as wiring. Thefilter unit 20 is provided, for example, on the one main surface 101.The filter unit 20 and the matching unit 40 provided on the one mainsurface 101 of the multilayer substrate 100 are resin-sealed with resin110 (epoxy resin or the like). The filter unit 20 and the matching unit40 are protected by resin sealing with the resin 110, and reliability ofthe filter unit 20 and the matching unit 40 can be improved. Althoughthe entire one main surface 101 of the multilayer substrate 100 iscovered with the resin 110 in FIG. 2, for example, only the filter unit20 or the matching unit 40 may be resin-sealed with resin such asunderfill resin or the like. Further, a shield electrode may be formedon the resin 110. Thereby, entering of external noise into thehigh-frequency module 10 can be suppressed, and diffusion of noiseemitted from the high-frequency module 10 can be suppressed.

The amplifying unit 50 is provided on the other main surface 102 or inor on the inner layer of the multilayer substrate 100. In the presentembodiment, the amplifying unit 50 is provided in or on the inner layer105. The amplifying unit 50 is configured with, for example, a chipcomponent.

The switch unit 30 is provided on the one main surface 101 or in or onthe inner layer different from the other main surface 102 or the innerlayer provided with the amplifying unit 50. When the amplifying unit 50is provided on the other main surface 102, the switch unit 30 isprovided in or on any one of the one main surface 101 and the innerlayers of the multilayer substrate 100. When the amplifying unit 50 isprovided in or on the inner layer, the switch unit 30 is provided in oron a layer different from the one main surface 101, or the layerprovided with the amplifying unit 50. In this embodiment, the switchunit 30 is provided in or on the inner layer 104 that is a layerdifferent from the inner layer 105 provided with the amplifying unit 50.The switch unit 30 is configured with, for example, a chip component.

In this manner, in the present embodiment, the switch unit 30 and theamplifying unit 50 are configured with different chip components, andare individually provided on different layers of the multilayersubstrate 100.

In addition, in this embodiment, as illustrated in FIG. 2, theamplifying unit 50 and the matching unit 40 are provided on themultilayer substrate 100 such that a distance t1 between the amplifyingunit 50 and the matching unit 40 is larger than a distance t2 betweenthe amplifying unit 50 and the switch unit 30. Specifically, thematching unit 40 is provided on the one main surface 101 of themultilayer substrate 100, and the amplifying unit 50 is provided in oron a layer (inner layer 105) closer to the side of the other mainsurface 102 than the inner layer 104 in or on which the switch unit 30is provided. The reason for this is that, as illustrated in FIG. 1, thematching unit 40 is connected closer to a side of the amplifying unit 50than the switch unit 30, so that a feedback amount of a signal from theamplifying unit 50 to the matching unit 40 is larger than that from theswitch unit 30.

[3. Effect and the Like]

As described above, in the high-frequency module 10 according to thefirst embodiment, since the switch unit 30 and the amplifying unit 50are individually provided on the different layers or the different mainsurfaces of the multilayer substrate 100, the distance between theswitch unit 30 and the amplifying unit 50 is provided to be apart fromeach other, so that isolation characteristics between the switch unit 30and the amplifying unit 50 can be improved.

Further, since the matching unit 40 is provided on the one main surface101 of the multilayer substrate 100 and the amplifying unit 50 isprovided in or on the inner layer or the other main surface 102 of themultilayer substrate 100, the distance between the amplifying unit 50and the matching unit 40 is provided to be apart from each other, sothat isolation characteristics between the amplifying unit 50 and thematching unit 40 can be further improved, and thus an output of theamplifying unit 50 can be suppressed from returning to an output of thematching unit 40 and a signal can be suppressed from being oscillated.

Second Embodiment

The second embodiment will be described with reference to FIG. 3. Sincea circuit configuration of a high-frequency module 11 according to thesecond embodiment is the same as that of the high-frequency module 10according to the first embodiment, a description thereof will beomitted.

FIG. 3 is a cross-sectional view illustrating an example of thehigh-frequency module 11 according to the second embodiment. In FIG. 3,the illustration of the second switch 60 and the fourth switch 70 isomitted. A structure of the high-frequency module 11 according to thesecond embodiment is different from that of the high-frequency module 10according to the first embodiment in that at least a part of the switchunit 30 and at least a part of the amplifying unit 50 overlap with eachother in a plan view of the multilayer substrate 100. The other pointsare the same as those of the high-frequency module 10 according to thefirst embodiment. When a shape of the switch unit 30 in a plan view islarger than that of the amplifying unit 50 in a plan view, theamplifying unit 50 may completely overlap with the switch unit 30 in theplan view of the multilayer substrate 100. When the shape of the switchunit 30 in the plan view is smaller than that of the amplifying unit 50in the plan view, the switch unit 30 may completely overlap with theamplifying unit 50 in the plan view of the multilayer substrate 100.

According to the configuration of the present embodiment, a shape of themultilayer substrate 100 in a plan view becomes small, so that thehigh-frequency module 11 can be miniaturized.

Note that it is preferable that a ground layer be provided between theinner layer 104 and the inner layer 105. Consequently, a signal leakingfrom the amplifying unit 50 is blocked by the ground layer and hardlyreaches the switch unit 30, so that the isolation characteristicsbetween the switch unit 30 and the amplifying unit 50 can be improved.

Third Embodiment

The third embodiment will be described with reference to FIG. 4. Since acircuit configuration of a high-frequency module 12 according to thethird embodiment is the same as that of the high-frequency module 10according to the first embodiment, a description thereof will beomitted.

FIG. 4 is a cross-sectional view illustrating an example of thehigh-frequency module 12 according to the third embodiment. In FIG. 4,the illustration of the second switch 60 and the fourth switch 70 isomitted. A structure of the high-frequency module 12 according to thethird embodiment is different from that of the high-frequency module 11according to the second embodiment in that the switch unit 30 isprovided in or on a layer (for example, the inner layer 103) on the sideof the one main surface 101 among the plurality of layers configuringthe multilayer substrate 100. The other points are the same as those ofthe high-frequency module 11 according to the second embodiment. Notethat the layer on the side of the one main surface 101 among theplurality of layers configuring the multilayer substrate 100 is a layerthat is located closer to the side of the one main surface 101 than acenter of the multilayer substrate 100 in a thickness direction.

According to the configuration of the present embodiment, since theswitch unit 30 is provided on the side of the one main surface 101provided with the filter unit 20, a wiring length of each wiringconnecting the switch unit 30 (the first switch 31 and the third switch32) and the filter unit 20 (the first filters 21 a and 21 b and thesecond filters 22 a to 22 c) can be shortened, and transmission loss canbe suppressed.

Fourth Embodiment

The fourth embodiment will be described with reference to FIG. 5. Sincea circuit configuration of a high-frequency module 13 according to thefourth embodiment is the same as that of the high-frequency module 10according to the first embodiment, a description thereof will beomitted.

FIG. 5 is a cross-sectional view illustrating an example of thehigh-frequency module 13 according to the fourth embodiment. In FIG. 5,the illustration of the fourth switch 70 is omitted. A structure of thehigh-frequency module 13 according to the fourth embodiment is differentfrom that of the high-frequency module 12 according to the thirdembodiment in that the second switch 60 is provided separately from theswitch unit 30 in the multilayer substrate 100. The other points are thesame as those of the high-frequency module 12 according to the thirdembodiment. For example, the second switch 60 is configured with a chipcomponent different from the switch unit 30.

As illustrated in FIG. 1, a high-frequency signal of the frequency bandincluded in the first frequency band group passes through a first pathin which the first filters 21 a and 21 b, the first switch 31, the firstmatching element 41, and the first amplifier 51 are connected in thisorder, and a high-frequency signal of the frequency band included in thesecond frequency band group passes through a second path in which thesecond filters 22 a to 22 c, the second switch 60, the second matchingelement 42, and the second amplifier 52 are connected in this order. Atthis time, since the first switch 31 (the switch unit 30) and the secondswitch 60 are provided separately from each other, isolationcharacteristics between the first path and the second path can beimproved.

In this embodiment, the second switch 60 is provided in or on a layer(for example, the inner layer 103) closer to the side of the one mainsurface 101 among the plurality of layers configuring the multilayersubstrate 100. Thus, since the second switch 60 is provided on the sideof the one main surface 101 provided with the filter unit 20, a wiringlength of each wiring connecting the second switch 60 and the filterunit 20 (the second filters 22 a to 22 c) can be shortened, andtransmission loss can be suppressed.

Fifth Embodiment

The fifth embodiment will be described with reference to FIG. 6. Since acircuit configuration of a high-frequency module 14 according to thefifth embodiment is the same as that of the high-frequency module 10according to the first embodiment, a description thereof will beomitted.

FIG. 6 is a cross-sectional view illustrating an example of thehigh-frequency module 14 according to the fifth embodiment. A structureof the high-frequency module 14 according to the fifth embodiment isdifferent from that of the high-frequency module 13 according to thefourth embodiment in that the fourth switch 70 is provided separatelyfrom the switch unit 30 in the multilayer substrate 100, andinput/output terminals 120 (for example, electrodes such as plate orcopper paste, or solder) connected to the fourth switch 70 are providedon the other main surface 102. The other points are the same as those ofthe high-frequency module 13 according to the fourth embodiment. Forexample, the fourth switch 70 is formed with a chip component differentfrom the switch unit 30. The fourth switch 70 is provided in or on alayer (inner layer 105) closer to the side of the other main surface 102among the plurality of layers configuring the multilayer substrate 100.Note that the layer closer to the side of the other main surface 102among the plurality of layers configuring the multilayer substrate 100is a layer located closer to the side of the other main surface 102 thana center of the multilayer substrate 100 in the thickness direction.Accordingly, since the fourth switch 70 is provided on the side of theother main surface 102 provided with the input/output terminals 120, awiring length of each wiring connecting the fourth switch 70 and theinput/output terminals 120 can be shortened, and transmission loss canbe suppressed.

Sixth Embodiment

The sixth embodiment will be described with reference to FIG. 7. Since acircuit configuration of a high-frequency module 15 according to thesixth embodiment is the same as that of the high-frequency module 10according to the first embodiment, a description thereof will beomitted.

FIG. 7 is a cross-sectional view illustrating an example of thehigh-frequency module 15 according to the sixth embodiment. A structureof the high-frequency module 15 according to the sixth embodiment isdifferent from that of the high-frequency module 14 according to thefifth embodiment in that the fourth switch 70 and the amplifying unit 50are provided on the other main surface 102 and are resin-sealed with theresin 110. In the present embodiment, the input/output terminals 120are, for example, a copper pin, a copper pillar or the like, and areprovided on one end side and the other end side of the multilayersubstrate 100. The other points are the same as those of thehigh-frequency module 14 according to the fifth embodiment. The fourthswitch 70 and the amplifying unit 50 are protected by the resin sealingwith the resin 110, and reliability of the fourth switch 70 and theamplifying unit 50 can be improved. Although the entire other mainsurface 102 of the multilayer substrate 100 is covered with the resin110 in FIG. 7, for example, only the fourth switch 70 or the amplifyingunit 50 may be resin-sealed with resin such as underfill resin. Afterthe resin sealing process, the resin 110, the input/output terminals120, the fourth switch 70, and the amplifying unit 50 may be polished.As a result, it is possible to further reduce a height of thehigh-frequency module 15. Further, a shield electrode may be formed onthe resin 110. Thereby, entering of external noise into thehigh-frequency module 15 can be suppressed, and diffusion of noiseemitted from the high-frequency module 15 can be suppressed.

Seventh Embodiment

The seventh embodiment will be described with reference to FIG. 8 toFIG. 9B. Since a circuit configuration of a high-frequency module 16according to the seventh embodiment is the same as that of thehigh-frequency module 10 according to the first embodiment, adescription thereof will be omitted.

FIG. 8 is a cross-sectional view illustrating an example of thehigh-frequency module 16 according to the seventh embodiment. Astructure of the high-frequency module 16 according to the seventhembodiment is different from that of the high-frequency module 10according to the first embodiment in that the switch unit 30 and theamplifying unit 50 are formed with one semiconductor chip component 130.The other points are the same as those of the high-frequency module 10according to the first embodiment. The semiconductor chip component 130is provided on the other main surface 102 or in or on the inner layer ofthe multilayer substrate 100. In the present embodiment, thesemiconductor chip component 130 is provided in or on the inner layer105.

FIG. 9A is a top view illustrating an example of the semiconductor chipcomponent 130 according to the seventh embodiment. FIG. 9B is across-sectional view illustrating an example of the semiconductor chipcomponent 130 according to the seventh embodiment. FIG. 9B is across-sectional view taken along a line IXB-IXB of the semiconductorchip component 130 in FIG. 9A.

As illustrated in FIGS. 9A and 9B, the semiconductor chip component 130includes a first region 131 and a second region 132 separated by aground 140, the amplifying unit 50 is provided in the first region 131,and the switch unit 30 is provided in the second region 132. In FIG. 9Aand FIG. 9B, a circuit component 150, such as a power supply circuit ora logic circuit, for controlling the switch unit 30 and the amplifyingunit 50 is illustrated. The circuit component 150 is provided, forexample, in the second region 132 in which the switch unit 30 isprovided.

The first region 131 and the second region 132 are separated by theground 140, a signal leaking from the amplifying unit 50 provided in thefirst region 131 is blocked by the ground 140, and the signal hardlyreaches the switch unit 30 provided in the second region 132, therebyimproving isolation characteristics between the switch unit 30 and theamplifying unit 50.

Also, in this embodiment, the amplifying unit 50 and the matching unit40 are provided on the multilayer substrate 100 such that a distancebetween the amplifying unit 50 and the matching unit 40 is larger than adistance between the amplifying unit 50 and the switch unit 30.Specifically, the semiconductor chip component 130 and the matching unit40 are provided on the multilayer substrate 100 such that a distancebetween the amplifying unit 50 provided on the semiconductor chipcomponent 130 and the matching unit 40 provided on the one main surface101 becomes larger than a distance between the amplifying unit 50 andthe switch unit 30 in the semiconductor chip component 130. Thus,isolation characteristics between the amplifying unit 50 and thematching unit 40 can be further improved, and an output of theamplifying unit 50 can be prevented from returning to an output of thematching unit 40, thereby suppressing oscillation of a signal.

Eighth Embodiment

The eighth embodiment will be described with reference to FIG. 10. Thehigh-frequency module described in the above embodiment can be appliedto a communication device.

FIG. 10 is a configuration diagram illustrating an example of acommunication device 1 according to the eighth embodiment. In FIG. 10,the high-frequency module 10, the antenna elements ANT1 and ANT2, and anRF signal processing circuit (RFIC) 80 are illustrated. Thehigh-frequency module 10 and the RFIC 80 configure the communicationdevice 1. Note that the antenna elements ANT1 and ANT2 may beincorporated in the communication device 1.

The high-frequency module 10 is a circuit configured to transmit ahigh-frequency signal between each of the antenna elements ANT1 and ANT2and the RFIC 80. The RFIC 80 is an RF signal processing circuitconfigured to process high-frequency signals to be transmitted orreceived by the antenna elements ANT1 and ANT2. More specifically, theRFIC 80 performs signal processing on a high-frequency signal inputtedfrom the antenna elements ANT1 and ANT2 via the high-frequency module 10by down conversion or the like, and outputs the received signalgenerated by the signal processing to a baseband signal processingcircuit (not illustrated).

Since the communication device 1 includes the high-frequency module 10,it is possible to provide a communication device 1 in which isolationcharacteristics can be improved.

Note that although the communication device 1 includes thehigh-frequency module 10, the communication device 1 may include any oneof the high-frequency modules 11 to 16.

Other Embodiments

Although the high-frequency module and the communication deviceaccording to the embodiments of the present disclosure have beendescribed above, the present disclosure is not limited to theembodiments described above. Further embodiments achieved by combiningany constituent elements in the above embodiments and modificationsobtained by a person skilled in the art without departing from thespirit and scope of the present disclosure are also included in thepresent disclosure.

For example, in the above embodiment, although the switch unit 30includes both the first switch 31 and the third switch 32 as a switchconnected to the filter unit 20, only one of the first switch 31 and thethird switch 32 may be provided. When the switch unit 30 does notinclude the first switch 31, the matching unit 40 and the amplifyingunit 50 may have a matching element and an amplifier for each of thefirst filters 21 a and 21 b.

Further, for example, in the embodiment described above, the switch unit30 is provided in or on the inner layer of the multilayer substrate 100,but may also be provided on the one main surface 101.

Further, for example, in the first and second embodiments, the filterunit 20 may be provided in or on an inner layer of the multilayersubstrate 100.

Further, for example, the number of filters configuring the filter unit20, the number of matching elements configuring the matching unit 40,and the number of amplifiers configuring the amplifying unit 50illustrated in FIG. 1 are merely examples, and are not limited thereto.

The present disclosure is widely applicable to a communication apparatussuch as a cellular phone as a high-frequency module and a communicationdevice that can be applied to a multiband system.

-   -   1 COMMUNICATION DEVICE    -   10 TO 16 HIGH-FREQUENCY MODULE    -   20 FILTER UNIT    -   21 a, 21 b FIRST FILTER    -   22 a TO 22 c SECOND FILTER    -   30 SWITCH UNIT    -   31 FIRST SWITCH    -   32 THIRD SWITCH    -   40 MATCHING UNIT    -   41 FIRST MATCHING ELEMENT 1    -   42 SECOND MATCHING ELEMENT 2    -   50 AMPLIFYING UNIT    -   51 FIRST AMPLIFIER    -   52 SECOND AMPLIFIER    -   60 SECOND SWITCH    -   70 FOURTH SWITCH    -   80 RF SIGNAL PROCESSING CIRCUIT (RFIC)    -   100 MULTILAYER SUBSTRATE    -   101 ONE MAIN SURFACE    -   102 THE OTHER MAIN SURFACE    -   103 TO 105 INNER LAYER    -   110 RESIN    -   120 INPUT/OUTPUT TERMINAL    -   130 SEMICONDUCTOR CHIP COMPONENT    -   131 FIRST REGION    -   132 SECOND REGION    -   140 GROUND    -   150 CIRCUIT COMPONENT    -   ANT1, ANT2 ANTENNA ELEMENT

1. A high-frequency module comprising: a filter; a switch connected tothe filter, and configured selectively connect the filter to ahigh-frequency signal path; a semiconductor chip comprising anamplifier, the amplifier configured to amplify a high-frequency signalthat passes through the selectively connected filter; a matching circuitelement connected between the filter and the amplifier, and configuredto perform impedance matching of the amplifier; and a multilayersubstrate, wherein the filter, the switch, the semiconductor chip, andthe matching circuit element are in or on the multilayer substrate, andwherein the semiconductor chip at least partially overlaps the matchingcircuit element, the switch, or the filter in a plan view of themultilayer substrate.
 2. A high-frequency module comprising: a filter; aswitch connected to the filter, and configured selectively connect thefilter to a high-frequency signal path; a semiconductor chip comprisingan amplifier, the amplifier configured to amplify a high-frequencysignal that passes through the selectively connected filter; a matchingcircuit element connected between the filter and the amplifier, andconfigured to perform impedance matching of the amplifier; and amultilayer substrate, wherein the filter, the switch, the semiconductorchip, and the matching circuit element are in or on the multilayersubstrate, and wherein the semiconductor chip and the switch arephysically separated in or on the multilayer substrate by a groundregion.
 2. The high-frequency module according to claim 1, wherein adistance between the amplifier and the matching circuit element isgreater than a distance between the amplifier and the switch.
 3. Thehigh-frequency module according to claim 2, wherein a distance betweenthe amplifier and the matching circuit element is greater than adistance between the amplifier and the switch.
 4. The high-frequencymodule according to claim 1, wherein the matching circuit element andthe amplifier are on opposite main surfaces of the multilayer substrate.5. The high-frequency module according to claim 2, wherein the matchingcircuit element and the amplifier are on opposite main surfaces of themultilayer substrate.
 6. The high-frequency module according to claim 1,wherein the amplifier is a low-noise amplifier.
 7. The high-frequencymodule according to claim 2, wherein the amplifier is a low-noiseamplifier.
 8. The high-frequency module according to claim 1, whereinthe first matching circuit element is a chip inductor.
 9. Thehigh-frequency module according to claim 2, wherein the first matchingcircuit element is a chip inductor.
 10. The high-frequency moduleaccording to claim 1, wherein the filter and the switch are on oppositemain surfaces of the multilayer substrate.
 11. The high-frequency moduleaccording to claim 2, wherein the filter and the switch are on oppositemain surfaces of the multilayer substrate.
 12. The high-frequency moduleaccording to claim 1, wherein the matching circuit element and theswitch are on opposite main surfaces of the multilayer substrate. 13.The high-frequency module according to claim 2, wherein the matchingcircuit element and the switch are on opposite main surfaces of themultilayer substrate.
 14. A communication device comprising: a radiofrequency (RF) signal processing circuit configured to process ahigh-frequency signal transmitted or received by an antenna; and thehigh-frequency module according to claim 1, configured to transmit thehigh-frequency signal between the antenna and the RF signal processingcircuit.
 15. A communication device comprising: a radio frequency (RF)signal processing circuit configured to process a high-frequency signaltransmitted or received by an antenna; and the high-frequency moduleaccording to claim 2, configured to transmit the high-frequency signalbetween the antenna and the RF signal processing circuit.